微波调节的Mn-doped ZnO用于全合一超级电容器:将缺陷化学与电化学行为相关联
Mohamad Hasan Aleinawi1, Ameen Uddin Ammar2, Duygu Şentürk1
1Faculty of Engineering and Natural Sciences, Sabanci University, Tuzla, Istanbul, 34956, Turkey.
Journal of colloid and interface science
|June 3, 2025
概括
使用微波辅助合成的添加氧化 (ZnO) 显示了超级电容器性能的改善. 一个2%的Mn-doped ZnO样本实现了高容量和能量密度,在5000个循环中具有出色的稳定性.
科学领域:
- 材料科学 材料科学 材料科学
- 电化学 电化学 电化学
- 纳米技术 纳米技术
背景情况:
- 氧化 (ZnO) 是超级电容器的一个有前途的电极材料,因为它具有成本效益,快速的充放电率和稳定性.
- 微波辅助合成提供了一种高效,环保的方法来控制ZnO形态.
- 用 (Mn) 离子对ZnO进行兴奋剂可以提高电化学性能.
研究的目的:
- 通过微波辅助合成在不同功率级别 (160-800W) 中合成未使用和Mn-的ZnO材料.
- 研究合成的 ZnO 样本的结构,形态和缺陷特性.
- 为了评估Mn-doped ZnO电极的超级电容器性能.
主要方法:
- 微波辅助合成ZnO和胺的 ZnO.
- 使用X射线衍射 (XRD),扫描电子显微镜 (SEM),电子偏磁共振 (EPR),光发光 (PL) 和拉曼光谱的形态结构特征.
- 超级电容器性能的电化学评估,包括特定电容,功率密度,能量密度和循环稳定性.
主要成果:
- 胺引入了额外的电荷载体,并增强了法拉代反应的扩散,而不会影响ZnO的结晶性.
- 使用2%的胺的 ZnO 样品获得了 340 F/g 的特定电容,功率密度为 59.7 kW/kg,能量密度为 47.1 Wh/kg.
- 所有样品都表现出良好的稳定性,在5000个循环后保持了70%以上的容量;在160W时合成的2%Mn-doped ZnO保持了90%以上的容量.
结论:
- 离子的度对于优化ZnO电极中的超级电容器性能至关重要.
- 在ZnO中使用2%的胺,在电荷载体和结构完整性之间提供了最佳的平衡,从而产生了优越的电化学性能.
- 微波辅助合成在160W和2%的Mn兴奋剂产生高度稳定和高效的基于ZnO的超级电容电极.
关键词:
缺陷工程是什么?缺陷工程是什么?微波辅助合成技术的使用2+) 的兴奋剂.超级电容器的超级电容器是什么ZnO ZnO ZnO ZnO ZnO ZnO ZnO ZnO ZnO ZnO ZnO ZnO更多相关视频
07:57Author Spotlight: A Rapid, Microwave-Assisted Hydrothermal Synthesis Of Nickel Hydroxide Nanosheets
Published on: August 18, 2023
2.1K
06:53Author Spotlight: Magnetometric Characterization of Intermediates in the Solid-State Electrochemistry of Redox-Active Metal-Organic Frameworks
Published on: June 9, 2023
2.1K
相关概念视频
MOS Capacitor
1.0K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.0K
Capacitor With A Dielectric
4.2K
Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
4.2K
