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Fabrication of Spatially Confined Complex Oxides
Published on: July 1, 2013
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在稀土杂氧化物中完全光学控制电荷捕获缺陷
Leonardo V S França1, Shaan Doshi1, Haitao Zhang2
1Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL 60637, USA.
Nanophotonics (Berlin, Germany)
|June 5, 2025
概括
研究人员展示了稀土合晶体中电荷捕获缺陷的全光学控制. 该方法使用光学电荷捕获 (OCT) 和光学刺激发光 (OSL) 来精确操纵电荷密度,推进光学存储和量子技术.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 量子技术 量子技术 量子技术
背景情况:
- 电荷捕获缺陷对于微电子,光学存储,传感和量子技术至关重要.
- 控制被困电荷是减少量子发射器噪声和实现高密度光学存储的关键.
研究的目的:
- 报告稀土离子兴奋氧化物中电荷捕获缺陷的全光学控制.
- 研究用于缺陷操纵的光学电荷捕获 (OCT) 和光学刺激发光 (OSL).
- 为了证明在环境条件下控制 Pr-doped Y2O3 中的电荷密度.
主要方法:
- 使用光学电荷捕捉 (OCT) 光谱在稀土离子杂的Y2O3.3.上
- 使用低强度光学激发 (200-375 nm) 来捕获电荷.
- 使用532nm刺激进行光学刺激发光 (OSL) 来脱离电荷.
主要成果:
- 通过 Pr-doped Y2O3.3 的 Y2O3 带间吸收和 Pr3+ 4f-5d 转换观察到的电荷捕获.
- 在Y2O3矩阵中证明了受困电荷密度的有效,全光学控制.
- 在环境环境条件下实现控制.
结论:
- 开发了一种可行的全光学方法,用于控制稀土合晶体中的局部电荷环境.
- 为具有超高容量的先进光学存储技术铺平了道路.
- 能够在稀土杂固体中局部控制量子连贯性.
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