低频1/f噪声和屏障高度不均性在拓绝缘体基于光学探测器
Sk Kalimuddin1, Biswajit Das1, Sudipta Chatterjee2
1School of Physical Sciences, Indian Association for the Cultivation of Science, 2A & 2B Raja S C Mullick Road, Jadavpur, Kolkata 700032, India.
ACS applied materials & interfaces
|June 7, 2025
概括
像Bi2Se3这样的拓绝缘体与相结合,显示出光检测器的前景. 本研究分析了它们的光电子响应和低频噪声,以提高设备性能.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 设备物理 设备物理
背景情况:
- 拓绝缘器 (TI) 具有独特的表面状态,有利于光电子.
- TI半导体异质连接显示光响应,但受到1/f噪声的限制.
- 了解1 / f噪声对于商业化基于TI的设备至关重要.
研究的目的:
- 研究一个Bi2Se3/Si p-n二极管的光电子反应.
- 描述这个混合异构连接中的1/f噪声.
- 评估其用于光探测器应用的潜力.
主要方法:
- 使用拓绝缘体Bi2Se3和制造一个p-n二极管.
- 取决于温度的电流-电压 (I-V) 和电容-电压 (C-V) 测量.
- 对低频1/f导电性噪声光谱和光电流缩放的分析.
主要成果:
- 确定了光检测器的关键参数 (屏障高度,理想度因子).
- 1/f 噪声光谱表示影响运输的陷状态.
- 光电流缩放表明了重组和拓表面状态效应.
结论:
- 在Bi2Se3/Si异质连接处,表现出极好的光响应.
- 观察到相当低的1/f噪声,使其适合于室温可见光探测器.
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