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Updated: Jul 17, 2026

Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application
08:18

Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

Published on: October 3, 2015

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多晶ZnTe薄膜的光电子特性和电荷载体动力学

Yuke Zhao1,2, Zhenglin Jia1,2, Qianqian Lin1,2,3,4

  • 1Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, China.

The journal of physical chemistry letters
|June 7, 2025
PubMed
概括

Telluride (ZnTe) 薄膜中的电荷载体寿命因缺陷捕获而随着光强度的提高而减少. 温度影响这些光电子材料中的载体动力学和激发性吸收.

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Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

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相关概念视频

Fermi Level Dynamics01:12

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...