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道效应对辐射硬化InAlGaN HEMT对低地球轨道应用的影响

Shao-Kuan Lee¹, You-Chen Weng², Chien-Yuan Huang¹

¹International College of Semiconductor Technology, National Yang Ming Chiao Tung University, 30010 Hsinchu, Taiwan.

|June 9, 2025

概括

将InAlGaN高电子流动性晶体管 (HEMT) 的通道厚度优化为100nm,可以提高对90MeV质子辐射的辐射硬度. 这对于低地球轨道 (LEO) 应用中可靠的性能至关重要.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理
电子产品中的辐射效应.

背景情况:

高电子移动性晶体管 (HEMT) 对太空应用至关重要.
在AlGaN中,HEMT容易受到辐射损伤,影响其性能.
低地球轨道 (LEO) 环境带来了重大的辐射挑战.

研究的目的:

为了研究通道厚度对InAlGaN HEMTs辐射硬度的影响.
为了确定受到质子辐射的设备的最佳通道厚度.
了解辐射下的InAlGaN HEMT中的降解机制.

主要方法:

制造具有不同通道厚度 (50,100,150 nm) 的InAlGaN HEMT.
使用90 MeV质子在从2 × 10^10到2 × 10^13质子/厘米^2.2.的流动度的设备的质子辐射.
辐射前后的设备性能 (直流,射频,移动性,板电阻) 的表征.

主要成果:

与50nm和150nm相比,100nm通道厚度显示出更高的辐射硬度.
在100nm设备中保持了更高的移动性和更低的板电阻.
电离性能量损失是主要的降解机制,有来自移位损伤的贡献.

结论:

通道厚度是提高InAlGaN HEMTs辐射耐受性的关键参数.
100纳米的通道厚度为LEO应用提供了最佳的辐射硬度.
设备设计优化对于在恶劣的辐射环境中可靠运行至关重要.

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