在Kagome反铁磁磁体中通过无otropic 菌株打印电可切换的尺度旋转奇拉性
Debjoty Paul1, Shivesh Yadav1, Shikhar Gupta1
1Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai, 400005, India.
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|June 10, 2025
概括
在Mn3Sn薄膜中的异性向变菌使得对磁性状态的控制成为可能,在室温下诱导一个巨大的异常霍尔效应. 这一突破允许开发具有多个稳定状态的新型自旋电子记忆器件.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 像Mn3Sn这样的拓性性反铁磁体对旋电子有希望.
- 它们的特性与异国情调的磁性配置有关.
研究的目的:
- 为了证明异性压力作为一种方法来操纵Mn3Sn薄膜的磁性基本状态.
- 为了释放新的功能,用于spintronic应用程序.
主要方法:
- 在Mn3Sn薄膜上施加异性压力.
- 研究由此产生的点群对称性变化 (C3v到C1).
- 分析在平面内Dzyaloshinskii-Moriya相互作用和旋转倾斜的诱导.
主要成果:
- 对称性减小使旋转倾斜成为可能,并引入标尺旋转奇拉性和贝里阶段.
- 在室温下,Kagome平面中观察到一个巨大的异常霍尔效应 (AHE).
- 创建多个稳定,非挥发性异常的霍尔电阻 (AHR) 记忆状态.
结论:
- 不同热带应变是一种强大的工具,用于调整Mn3Sn.中的磁性.
- 观察到的AHE和AHR内存状态为自旋电子设备提供了新的功能.
- 热辅助电流诱导切换可以有效控制这些内存状态.
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