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MoS₂ 道增强高密度电荷陷闪存和机器学习辅助传感方法对于以内存为中心的计算系统

Ki Han Kim¹, Ju Han Park^1,2, Khang June Lee³

¹School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu, 41566, Republic of Korea.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)

|June 10, 2025

概括

二硫化物 (MoS2) 为3D NAND闪存提供了一个有希望的替代通道材料,解决了传统的局限性. 这一进步支持AI边缘计算的高密度,低功耗存储.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
计算机工程计算机工程

背景情况:

人工智能边缘计算对高密度,低功耗,可靠的非易失性内存的需求日益增长.
使用多晶 (Poly-Si) 通道的传统3D NAND闪存的局限性,包括短通道效应和电池电流限制.
需要替代道材料来克服Poly-Si的瓶.

研究的目的:

研究二硫化物 (MoS2) 作为3D NAND闪存电池的新通道材料.
为了评估基于MoS2的非易失性内存的性能和可靠性.
为了证明MoS2适用于下一代以AI为中心的边缘设备的适用性.

主要方法:

使用MoS2作为通道材料制造和表征3DNAND闪存电池.
电气测量包括厚度依赖的特性和温度依赖的导电研究.
技术计算机辅助设计 (TCAD) 模拟和深度强化学习驱动的伯克利短通道IGFET模型 (BSIM) 参数校准用于电路级验证.

主要成果:

由于其低带隙,MoS2能够在中等电压下以孔注射为基础的删除,并且具有更广泛的内存窗口.
一个低k道层提高了门合比,降低了程序/删除电压,提高了可靠性 (10^4周期耐久性,10^5秒保留).
MoS2通道厚度与耐力和保留指标相关,通过模拟和电路级测试进行验证.

结论:

基于MoS2的非易失性存储器有效地满足了对高密度,低功耗和可靠存储的需求.
本材料为人工智能驱动的边缘计算应用提供了可行和有前途的解决方案.
开发的方法适用于评估下一代内存设备中的新通道材料.

关键词:

3D NAND闪存可以使用.在MoS2的基础上,MoS2 机器学习是机器学习.不易挥发的记忆力不易挥发的记忆力

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