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Updated: Jun 12, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.6K

全无机金属氧化物基 p-n 异质连接三态晶体管

Minho Jin1,2, Jong Chan Shin3, Jiho Lee3

  • 1Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea.

ACS nano
|June 10, 2025
PubMed
概括

这项研究引入了使用氧化 (IGZO) 和氧化 (TeSeO) 的全无机氧化物三元态晶体管 (TST). 这些晶体管实现了高效的三元逻辑,克服了当前互补金属氧化物半导体 (CMOS) 技术的局限性.

关键词:
金属氧化物金属氧化物p-n 异质连接晶体管的晶体管氧化和氧化.三元逻辑的三元逻辑三元状态晶体管的三元状态晶体管

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