对于1200V 4H-SiC MOSFET的终结强度设计的实验和分析
Mengyuan Yu1,2, Yi Shen1,2, Hongping Ma1,2,3
1Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China.
Nanomaterials (Basel, Switzerland)
|June 11, 2025
概括
这项研究涉及在高温反向偏差 (HTRB) 测试期间在1200V碳化 (SiC) MOSFET中降低断裂电压. 一个优化的终端结构显著提高了设备的强度和可靠性.
科学领域:
- 电力电子 电力电子 电力电子
- 半导体设备物理 半导体设备物理
- 材料科学 材料科学 材料科学
背景情况:
- 1200V碳化物 (SiC) 金属氧化物半导体场效应晶体管 (MOSFET) 对于高功率应用至关重要.
- 高温反向偏差 (HTRB) 测试对于评估设备可靠性至关重要.
- 断裂电压 (BV) 的降解是SiC MOSFET的一个关键故障机制.
研究的目的:
- 在HTRB条件下研究SiC MOSFET中分解电压降低的降解机制.
- 提出和验证一个优化的终端结构,以提高HTRB可靠性.
- 为了提高SiC MOSFET的长期稳定性和强度.
主要方法:
- 在HTRB测试期间对SiC MOSFET降解的实验调查.
- 在SiC/SiO2接口上分析电场分布和电荷捕获.
- 使用计算机辅助设计 (TCAD) 技术设计和模拟一个优化的终端结构.
- 对拟议的终端结构性能进行实验验证.
主要成果:
- 在终端区域的SiC/SiO2接口上的被困电荷被确定为过早故障的原因.
- 提出了优化的终端结构,其中包括减少场环间距和额外的外环.
- TCAD模拟和实验结果证实,改进的设计在1000小时的HTRB测试中保持了BV在2%的偏差范围内.
结论:
- 拟议的优化终端结构有效地减轻了在HTRB测试期间SiC MOSFET中故障电压的降解.
- 改进的终端设计显著提高了1200VSiC MOSFET的可靠性和稳定性.
- 这项工作为提高SiC电源设备的长期性能提供了可行的解决方案.
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