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Updated: Jun 14, 2025

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对AlTiO/4H-SiC MOS电容器进行界面化学和电气性能研究和热炼精炼

Yu-Xuan Zeng1,2, Wei Huang1,2, Hong-Ping Ma1,2,3

  • 1Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China.

Nanomaterials (Basel, Switzerland)
|June 11, 2025
PubMed
概括

这项研究开发了一种复合氧化 (AlTiO) 门介电器,用于使用原子层沉积 (ALD) 的碳化 (SiC) 电源设备. 退火改善了AlTiO介电器的性能.

关键词:
4H-SiC 4H-SiC 是一个在 AlTiOO 中使用.门介电器 门介电器高K材料的使用.接口状态接口状态

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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