适应性C-Si-Ge-Sn的Epitaxy:可定制的批量和量子结构
Omar Concepción1, Ambrishkumar J Devaiya1, Marvin H Zoellner2
1Peter Gruenberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Juelich, 52428, Juelich, Germany.
Advanced materials (Deerfield Beach, Fla.)
|June 12, 2025
概括
将碳引入--锡 (SiGeSn) 合金中,可以创建新的直接间隙IV组材料. 这些含碳合金增强了先进电子和光电子设备的红外光辐射.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 光电学是指光电子产品.
背景情况:
- --锡 (SiGeSn) 合金作为红外激光器的直接间隙材料具有前景.
- 扩展IV组合金的功能需要加入碳等元素来调整性能.
研究的目的:
- 探索含碳的--锡 (CSiGeSn) 合金的异质增长.
- 研究碳合并对GeSn合金结构,电子和光学性能的影响.
主要方法:
- 使用低压化学蒸汽沉积的CGeSn合金的异质生长.
- 使用CBr4前体,对碳进行控制的结合.
- CGeSn/GeSn多个量子井发光二极管 (LED) 的制造和表征.
主要成果:
- 实现了受控的碳合并 (<1at.%) 和增加的锡含量 (高达~18at.%).
- 碳调节应变,稳定晶体结构,并增强光学发射.
- 基于CGeSn/GeSn异构的LED在2.54μm时呈现出增强的近红外辐射,持续到室温.
结论:
- 碳合并是一种可行的策略,用于设计直间隙组IV合金.
- CSiGeSn合金为纳米电子,能量收集和量子计算提供了扩展的功能.
- 开发的CGeSn/GeSn异构结构显示了先进光电子应用的潜力.
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