C-Si-Ge-SnEpitaxy:

Omar Concepción1, Ambrishkumar J Devaiya1, Marvin H Zoellner2

  • 1Peter Gruenberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Juelich, 52428, Juelich, Germany.

概括

将碳引入--锡 (SiGeSn) 合金中,可以创建新的直接间隙IV组材料. 这些含碳合金增强了先进电子和光电子设备的红外光辐射.

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