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Updated: Jun 16, 2025

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在250微米厚的4H-SiC p-n交叉点探测器中由高温中子辐射诱导的缺陷

Alfio Samuele Mancuso1,2, Enrico Sangregorio2, Annamaria Muoio2

  • 1Department of Physics and Astronomy, University of Catania, 95123 Catania, Italy.

Materials (Basel, Switzerland)
|June 13, 2025
PubMed
概括

高温中子辐射显著降低了4H-SiC p-n连接探测器的电性能. 这项研究详细介绍了对电流-电压特征,载波度和深缺陷状态的影响.

关键词:
一个深层缺陷的缺陷.高温的高温的高温的高温中子检测检测中子检测.在 p-n 交叉点上.碳化是碳化的重要组成部分.

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相关概念视频

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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