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电流诱导的机械性能变化,缺陷的形成,以及与Au线结合的互连连接中的界面金属间增长
Xiaohong Yuan1,2, Qinlian He1,2, Xiaojing Wang3
1Yunnan Precious Metals Lab, Sino-Platinum Metals Co. Ltd., Kunming 650106, China.
ACS applied materials & interfaces
|June 13, 2025
概括
黄金 (Au-Al) 芯片债券中的电迁移 (EM) 由于极性效应而恶化,导致金属间化合物 (IMC) 的不均生长和降低机械性能. 本研究分析了这些影响,以提高半导体可靠性.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 可靠性工程可靠性工程
背景情况:
- 越来越多的芯片集成和包装密度增加了性能降低和电迁移 (EM) 在粘合界面上的故障风险.
- 电迁移 (EM) 故障是半导体可靠性的关键挑战,特别是在高度集成的芯片中.
- 商业设备和微尺度粘合接口中的极性差异在EM方面尚未完全理解.
研究的目的:
- 为了研究EM在商业芯片端Au-Al系统中的极性效应.
- 揭示金属间化合物 (IMC) 在高密度电流下结合接口的生长演变.
- 为开发高度集成,密集和可靠的半导体芯片提供理论基础.
主要方法:
- 开发了一个EM模拟模型来分析电流诱导的极性对物质迁移和IMC增长的影响.
- 结合模拟结果与实验数据进行综合分析.
- 描述了IMC相,形态和分布在Au-Al结合界面上的特征.
主要成果:
- 极性效应显著影响IMC层厚度,阳极层厚度大约是阴极层厚度的两倍.
- 尺寸效应导致边缘的IMC层比中心更厚.
- 确定了Al3Au8 (柱状) 和α-AlAu4 (纳米晶体) 作为主要的IMC相,具有明显的位置分布.
- 过度生长的IMC层降低了拉力力学性能,将故障模式从部骨折转变为关节脱落.
结论:
- 该研究阐明了对商业Au-Al芯片连接器EM和IMC增长的极性影响,改进了现有的研究框架.
- 了解这些现象对于提高先进半导体设备的可靠性至关重要.
- 这些发现为未来在高性能半导体芯片设计和制造方面的进步奠定了基础.
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