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Updated: Aug 14, 2026

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通过减小线程位移密度的应变松散模板,通过c平面InGaN激光二极管的增强光学增益

Hsun-Ming Chang, Norleakvisoth Lim, Vincent Rienzi

    Optics express
    |June 14, 2025
    PubMed
    概括

    这项研究使用纳米图案和表轴侧增长减少了GaN菌株放松模板中的线程位移密度. 这提高了蓝边发射激光二极管的性能,降低了门电流密度,提高了材料收益.

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    P-N junction01:11

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    A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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    Biasing of P-N Junction

    The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
    In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...