概括
研究人员在光子 (SiPh) 平台上使用半导体光学放大器 (SOA) 的微传输打印开发了可广泛调节的激光器. 这一突破使高功率,窄线宽激光器能够用于先进的光子应用.
科学领域:
- 光子学和材料科学 材料科学
- 集成光学 集成光学 集成光学
- 半导体设备工程 半导体设备工程
背景情况:
- 光子 (SiPh) 平台在开发具有高功率,窄线宽和低相对强度噪声 (RIN) 的可广泛调节激光器方面面临着挑战.
- 现有的解决方案往往难以满足波长分割多重复合 (WDM) 和光子传感等先进应用的严格要求.
- 在芯片上激光集成对于紧和可扩展的光子系统至关重要.
研究的目的:
- 在SiPh平台上展示一种用于制造广泛调节激光器的新方法.
- 为了实现同时控制激光腔增益和输出放大,使用双半导体光学放大器 (SOA) 结构.
- 为了实现高性能,紧的基于激光的光子系统在芯片上.
主要方法:
- 在SiPh平台上微传输打印双InP/InGaAs半导体光学放大器 (SOA).
- 集成SOA,使激光腔增益和光学放大同时控制.
- 可调节激光器性能的描述,包括调节范围,输出功率,线宽和RIN.
主要成果:
- 实现了一个可广泛调节的激光器,调节范围超过51nm.
- 提供每波长10mW的波导合输出功率.
- 显示了1.6kHz的狭窄线宽和约-140dB/Hz的低RIN.
结论:
- 开发的双SOA结构有效地使得芯片上可广泛调节的激光器具有卓越的性能.
- 微转印方法为SiPh平台上的高性能激光集成提供了可行的途径.
- 由此产生的激光器适用于WDM系统和光子传感中的苛刻应用,为先进的光子集成电路铺平了道路.
相关概念视频
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