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Updated: Aug 14, 2026

Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography
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增加具有低覆盖率p-GaN孔注射层的紫外线LED的光提取效率

Michael Wang, Wenting Gong, Feng Wu

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    |June 14, 2025
    PubMed
    概括

    研究人员使用p-GaN岛屿开发了新的紫外 (UV) 发光二极管 (LED),以促进光提取. 这项创新实现了UVBLED发射在300纳米和310纳米的创纪录效率.

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    相关概念视频

    P-N junction01:11

    P-N junction

    A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...