通过氧离子交换工程在原子层沉积的HfO2-x门绝缘体和氧化通道层中增强非挥发性电化学随机访问记忆和人工突触特征

Jimin Han1, Taeyun Noh2, Boyoung Jeong2

  • 1Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea.

概括

这项研究引入了一种先进的电化学随机访问存储器 (ECRAM),使用新型材料来增强非挥发性记忆和人工突触功能. 该设备在神经形态计算应用中表现出高性能.

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