在集成光子学中,接口拓驱动的损失最小化:THz超高Q腔和波导
Zhonglei Shen1,2,3, Yi Ji Tan1,3, Wenhao Wang1,3
1Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
Advanced materials (Deerfield Beach, Fla.)
|June 16, 2025
概括
拓谷光子晶体 (VPCs) 强有力的引导光. 研究人员确定辐射是主要的损失,并开发了一种方法来抑制它,显著提高了集成光子芯片的设备性能.
科学领域:
- 光子学 是一个光子学.
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
背景情况:
- 紧,坚固和超低损耗的光子设备对于集成光子芯片至关重要.
- 传统的设计面临的是紧性,坚固性和低损耗之间的权衡.
- 拓谷光子晶体 (VPC) 通过谷保护的边缘状态提供强大的光导.
研究的目的:
- 为了确定山谷边缘州的内在损失机制.
- 开发一种方法来抑制VPC中的辐射损失.
- 为了提高芯片上的光子设备的性能.
主要方法:
- 研究了辐射作为谷边州的主要损失机制.
- 拟议的接口拓驱动的带隙和波向量工程.
- 量身定制的接口几何结构,以最大限度地减少波导和空洞中的辐射损失.
主要成果:
- 在拓腔中的辐射损失减少了大约10^4倍.
- 在太赫兹模式下实现了31231.2的负载质量因子 (Q-因子).
- 由于增强的光物质相互作用,证明了高效的光谱调制与超低功率光刺激.
结论:
- 辐射是谷边州的主要损失机制.
- 接口拓工程有效地抑制了VPC中的辐射损失.
- 允许开发用于集成电路的超紧,超低损耗和强大的光子设备.
相关概念视频
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