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通过前体合金和对电化学性能的影响,对Mo_2-x CT _z MXenes的缺陷工程

Rodrigo M Ronchi¹, Ningjun Chen¹, Joseph Halim¹

¹Materials Design Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden.

Chemistry of materials : a publication of the American Chemical Society

|June 16, 2025

概括

像MXenes这样的二维材料的缺陷工程可以通过合金来实现. 这种牺牲元素创造了空缺,增强了用于储能和催化能的电化学特性.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
电化学电化学电化学

背景情况:

缺陷工程对于提高二维 (2D) 材料的性能至关重要.
基于二维 (Mo) 的MXenes为各种应用提供了潜力.
控制引入缺陷,如空位和毛孔,可以显著提高MXene的性能.

研究的目的:

开发一种简单且可重复的方法,用于在基于Mo的MXenes中引入随机空位和毛孔.
研究 (Cr) 作为MAX相前体中的牺牲元素的影响.
通过缺陷度来探索MXene属性的可调性,以增强应用.

主要方法:

结合第一原则计算和实验合成.
将Mo₂Ga₂C MAX阶段与Cr合金,以创建Cr-化前体 (Mo_2-xCr_xC和Mo_2-xCr_xGa₂C).
在酸中对Cr和Ga进行选择性蚀刻,以产生MXene板中的空隙和孔隙.

主要成果:

确定了在MAX阶段前体中Cr的结合的极限,约为60%的原子.
合成的Mo_2-xCr_xGa₂C与Cr的度高达25原子%.
一个Mo_1.87CT_zMXene从Mo_1.87Cr_0.13Ga₂C (6.5原子% Cr) 衍生出来,在2mVs^{-1时显示出1117Fcm-3的体积电容,这表明缺陷调节速率的能力.}

结论:

在MAX阶段使用Cr作为牺牲元素是MXenes缺陷工程的有效策略.
这种方法通过控制缺陷度来调整MXene属性的途径.
这种方法有可能扩展到其他牺牲元素和MAX阶段,用于各种应用,如能量储存和催化.

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