BaTiO3

Ya-Fei Jiang1, Huai-Yu Peng1, Yu Cai1

  • 1Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China. phxiang@ee.ecnu.edu.cn.

Materials horizons
|June 16, 2025
PubMed
概括

这项研究使用渐变铁电酸 (BTO) 薄膜引入了高性能电子突触. 集成电阻,铁电道连接 (FTJ) 和铁电二极管 (FD) 提高了人工神经网络的准确性和故障耐受性.