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基于模拟的超分辨率EBSD用于测量相对变形梯度张量

Aimo Winkelmann¹, Grzegorz Cios², Konrad Perzyński³

¹AGH University of Krakow, Academic Centre for Materials and Nanotechnology (ACMiN), al. A. Mickiewicza 30, 30-059 Kraków, Poland; ST Development GmbH, Wilhelmshöhe 7, 33102 Paderborn, Germany.

Ultramicroscopy

|June 17, 2025

概括

这项研究引入了一种新的电子反射散射衍射 (EBSD) 数据分析方法. 它通过使用高分辨率模拟,从低分辨率模式提高了应变和方向测量的精度.

科学领域:

材料科学材料科学材料科学
晶体学晶体学是指结晶学.
计算材料科学科学计算材料科学

背景情况:

电子反射衍射 (EBSD) 对于微观结构分析至关重要.
精确的应变和方向映射需要高分辨率的EBSD模式.
低分辨率模式往往限制了变形梯度张量测量的精度.

研究的目的:

开发一种数据分析方法,从低分辨率的基库奇模式进行精确的EBSD测量.
为了提高同位素相对变形梯度张量计算的准确性.
为了证明分析晶片变形的方法的应用.

主要方法:

使用高分辨率的基库奇模式模拟进行超级采样.
应用最合适的确定来从实验模式中提取张量参数.
使用有限元模拟来解释应变和旋转测量.

主要成果:

从低分辨率的EBSD数据中获得了张量参数的显著精度改进.
在不同模式分辨率的晶片上展示了高分辨率的定向和应变分析.
观察到的噪声水平在相对偏差应变规范和旋转角度的1x10^-4左右.

结论:

基于模拟的超级采样方法提高了EBSD分析的精度.
该方法可以显著减少所需的模式数据大小 (高达两倍数).
对于许多模式匹配任务,256x256像素的EBSD模式分辨率可能足够.

关键词:

电子反射散射器的折射差异是电子的反射差异.基库奇衍射是基库奇的衍射.压力应变是一种压力.

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