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Updated: Sep 19, 2025

The Effect of Charging and Discharging Lithium Iron Phosphate-graphite Cells at Different Temperatures on Degradation
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Published on: July 18, 2018

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阴离子介导的伪电容性在性电解质中的α-Fe2O3的界面充电中占主导地位 (0001)

Jordy J J Eggebeen1, Marc T M Koper1

  • 1Leiden Institute of Chemistry, Leiden University, PO Box 9502, 2300 RA Leiden, The Netherlands.

The journal of physical chemistry. C, Nanomaterials and interfaces
|June 18, 2025
PubMed
概括

在金属氧化物上的电催化包括来自质子交换的伪电容. 阴离子,不仅仅是双层充电,还介于反应,揭示了阴离子-联质子-联电子转移机制.

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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A parallel-plate capacitor with capacitance C, whose plates have area A and separation distance d, is connected to a resistor R and a battery of voltage V. The current starts to flow at t = 0. What is the displacement current between the capacitor plates at time t? From the properties of the capacitor, what is the corresponding real current?
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