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具有增强极化的CMOS兼容ScAlN铁电薄膜,用于高性能FeFET内存和人工突触

Bingqian Xu^1,2, Yao Cai², Zekai Wang²

¹Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China.

|June 19, 2025

概括

一个优化的基板增强了下一代电子产品的化 (ScAlN) 铁电特性. 这一突破使得更薄,高性能的ScAlN薄膜能够用于先进的内存和计算应用.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
纳米技术纳米技术

背景情况:

扫化 (ScAlN) 是一个有前途的铁电材料,用于先进的电子产品,由于其高残留极化和CMOS兼容性.
传统的沉积方法面临着高度和低厚度的ScAlN薄膜的挑战,导致铁电性能降低和泄漏增加.
开发稳定,高性能超薄铁电薄膜对于下一代低功耗内存和神经形态设备至关重要.

研究的目的:

为了研究优化的基板结构对物理蒸汽沉积 (PVD) 培养的ScAlN薄膜的铁电特性的影响.
在超薄的ScAlN薄膜中展示增强的铁电性,以改善Sc度和晶体方向控制.
评估基于ScAlN的铁电场效应晶体管 (FeFET) 和在优化基板上制造的人工突触的性能.

主要方法:

物理蒸汽沉积 (PVD) 用于在一个新的优化基板结构上生长ScAlN薄膜.
包括残留极化 (P_r) 在内的铁电性质,在不同厚度的Sc_0.2Al_0.8N,Sc_0.3Al_0.7N和Sc_0.35Al_0.65N薄膜中得到了特征.
基于ScAlN的FeFET和人工突触被制造并测试了内存窗口,切换比率,保留,耐久性和神经网络识别精度.

主要成果:

优化的基板显著增强了PVD培养的Sc_0.2Al_0.8N薄膜的铁电特性,即使在20纳米厚度也保持了高P_r.
改善的铁电性被验证为更高的Sc度 (Sc_0.3Al_0.7N和Sc_0.35Al_0.65N) 在不同的薄膜厚度.
制造出来的Sc_0.2Al_0.8N FeFET显示了17V的内存窗口,>10³的切换比率,>10⁴的保留,和>10⁴的循环耐久性.
人工突触在神经网络训练中实现了98.7%的识别精度,展示了节能计算的潜力.

结论:

优化的基板结构对于在PVD培养的ScAlN薄膜中实现卓越的铁电性能至关重要,特别是在超薄尺度.
这一进步克服了传统方法的局限性,使ScalN中稳定的单相铁电能能够满足要求高的电子应用.
展示的FeFET和人工突触性能凸显了ScAlN在下一代低功耗,高密度内存和神经形态计算方面的潜力.

关键词:

这就是为什么ScalNN 人工突触是人为的突触.铁电晶体管铁电晶体管高性能铁电薄膜是一种高性能铁电薄膜.神经形态计算是一种神经形态计算.

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