在CrSe2/Sc2CO2多铁异构结构中,磁性异构的偏振控制的切换
Zhijian He1,2,3, Daifeng Zou1,2
1School of Physics and Electronic Science, Hunan University of Science and Technology, Xiangtan 411201, People's Republic of China.
概括
研究人员为2D铁磁体开发了一种新的多铁基异构结构. 这种设计允许电气控制磁性异构,使得自旋电子设备的无电压调成为可能.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 二维 (2D) 磁性材料表现出独特的低维铁磁 (FM) 现象.
- 将二维铁磁铁集成到自旋器件中受到在平面 (IP) 内的轻松磁化轴的阻碍.
- 磁性异构的非挥发性电气控制对于先进的自旋电子技术至关重要.
研究的目的:
- 设计一个多铁子范德瓦尔斯 (vdW) 异构结构,用于动态操纵2D铁磁体中的磁电合.
- 通过极化工程来证明磁性异构的可逆切换.
- 在VDW异构结构中实现无电压磁性异构调.
主要方法:
- 研究了CrSe2/Sc2CO2异构结构,将FM CrSe2单层与铁电Sc2CO2层相结合.
- 利用极化工程来操纵磁电合.
- 分析了由铁电极化逆转驱动的轻磁化轴的过渡.
主要成果:
- 在CrSe2/Sc2CO2异构结构中证明了磁性异构的可逆切换.
- 在内平面 (IP) 和外平面配置之间实现了易于磁化轴的可控过渡.
- 建立了一个磁电合机制,用于动态异性异性控制.
结论:
- 拟议的多铁体vdW异构结构能够动态操纵2D铁磁体中的磁性异性质.
- 这种方法为无电压的磁性异构调提供了一个基本的策略.
- 这些发现阐明了低维系统中的界面磁电效应,并解锁了非挥发性内存和逻辑设备的功能.
更多相关视频
09:06Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
8.2K
09:49In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
4.2K
相关概念视频
Ferromagnetism
2.5K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.5K
Dielectric Polarization in a Capacitor
5.1K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
5.1K
Biasing of Metal-Semiconductor Junctions
343
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
343
Biasing of P-N Junction
914
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
914
Biasing of FET
373
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
373
Potential Due to a Polarized Object
475
A neutral atom consists of a positively charged nucleus surrounded by a negatively charged electron cloud. When placed in an external electric field, the external electric force pulls the electrons and nucleus apart, opposite to the intrinsic attraction between the nucleus and the electrons. The opposing forces balance each other with a slight shift between the center of masses of the nucleus and the electron cloud, resulting in a polarized atom. On the other hand, a few molecules, like water,...
475
