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Updated: Jul 31, 2026

Atomically Traceable Nanostructure Fabrication
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无金属高对比晶圆级阶段高度标准,高度范围大,基于全介电多层

Jinming Gou1,2,3,4,5,6, Yuying Xie1,2,3,4,5,6, Xiao Deng1,2,3,4,5,6

  • 1National Metrology and Testing Center for Integrated Circuit Measurement and Inspection Equipment Industry (Shanghai), Tongji University, Shanghai 200092, People's Republic of China.

Nanotechnology
|June 23, 2025
PubMed
概括

新的在绝缘体 (SOI) 介电多层提供高光学对比度晶圆级阶段高度标准. 这种方法提高了集成电路检查的准确性,并避免了传统方法常见的金属污染问题.

关键词:
纯电解压机 纯电解压机具有高对比度的高对比度没有金属的无金属.多层薄膜是多层的.步骤高度标准 标准步骤高度标准在晶圆层级的晶圆层级.

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