在多粒子辐射下对GaN-HEMT行为的新见解.
Rijin N T1, Dinesh Kumar Sharma1, M M Musthafa2
1Dept. of Physics, School of Sciences, JAIN University, Bangalore, Karnataka, 560069, India.
概括
这项研究研究了光子,中子和α辐射对高电子移动性化晶体管 (GaN-HEMT) 的影响. 辐射通过创建晶体缺陷和改变电子传输来影响排水电流和设备特性.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 核工程 核工程是指核工程.
背景情况:
- 化高电子移动性晶体管 (GaN-HEMT) 对于高功率电子设备至关重要.
- 了解辐射对GaN-HEMT的影响对于在恶劣环境中可靠运行至关重要.
研究的目的:
- 在光子,中子和α辐射下研究GaN-HEMT的电特性变化.
- 阐明辐射诱导损伤机制的基础物理.
主要方法:
- 对GaN-HEMT辐射后电气特性 (排水电流,ID-VD) 的实验分析.
- 开发一种量子力学方法来模拟辐射应激效应.
主要成果:
- 光子辐射降低了排水电流,归因于δ射线和晶体缺陷.
- 由于捕获和散射,中子辐射改变了ID-VD和区域.
- 阿尔法粒子诱导了组合的原子,核和δ射线效应,加上加热.
- 膝盖电压在很大程度上没有受到影响,这表明网格和运输损坏,而不是门.
结论:
- 不同的辐射类型会在GaN-HEMT中诱导不同的损伤机制.
- 辐射主要影响晶格和电子传输,而不是基本的操作值.
- 量子力学建模提供了对位移损伤和转变效应的洞察力.
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