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对超大规模红外探测器中ROIC像素的短暂剂量速率效应的研究

Yuan Liu¹, Bin Wang¹, Ziyuan Tang¹

¹State Key Laboratory of Wide Bandgap Semiconductor Technology, Faculty of Integrated Circuit, Xidian University, Xi'an 710071, China.

|June 27, 2025

概括

红外探测器中的大面积N孔易受玛射线对短暂剂量速率的影响. 模拟显示了显著的电流脉冲,影响了红外图像传感器对辐射强化的设计.

科学领域:

半导体物理半导体物理
电子产品中的辐射效应.
红外探测器技术红外探测器技术

背景情况:

红外图像传感器在许多行业中至关重要.
增加传感器尺度放大了暂时剂量速率效应.
辐射效应研究对于硬化设计至关重要.

研究的目的:

调查红外探测器读出电路中的大面积N井的短暂剂量速率影响.
分析马射线辐射对N-井反应的影响.
了解产生的电流脉冲的特性.

主要方法:

使用了TCAD (技术计算机辅助设计) 模拟.
模拟的马射线照射在不同的剂量速率 (3x10^11到9x10^11rad/s).
在N井中分析了当前脉冲生成和特征.

主要成果:

膨胀的N井在辐射下产生了显著的电流脉冲.
测量到的脉冲电流在剂量增加的速度下从39 nA到119 nA不等.
由于设计约束,观察到脉冲电流的阶段式特征.

结论:

红外探测器电路中的大型N-well区域容易受到短暂的辐射效应.
在55nm的合并设计中,GND与N-well的接近程度会影响脉冲电流的行为.
这些发现为开发辐射硬化红外传感器提供了数据.

关键词:

在N-井.这是TCAD TCAD.像素像素是一个像素.过渡剂量速率的影响

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