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Updated: Sep 18, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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重置脉冲宽度对基于Al2O3/TiOx的RRAM中的逐渐导电编程的影响

Hyeonseong Lim1, Wonbo Shim2, Tae-Hyeon Kim1

  • 1Department of Semiconductor Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea.

Micromachines
|June 27, 2025
PubMed
概括

在多级电阻式随机存取内存 (RRAM) 中缩短重置脉冲宽度显著提高了编程线性,并减少了设备变化. 这种优化使得基于Al2O3/TiO x的RRAM设备的多层操作更加可靠和精确.

关键词:
增量步骤脉冲编程 (ISPP) 是一种增量步骤脉冲编程.电阻随机访问存储器 (RRAM) 是一种电阻式随机访问存储器.电阻开关 电阻开关

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