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Updated: Sep 18, 2025

Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application
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Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

Published on: October 3, 2015

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岛状矿光电突触晶体管与ZnO通道层通过低温原子层沉积沉积而沉积

Jiahui Liu1, Yuliang Ye2, Zunxian Yang2

  • 1College of Information Science and Engineering, Huaqiao University, Xiamen 361021, China.

Materials (Basel, Switzerland)
|June 27, 2025
PubMed
概括

研究人员开发了一种新的波形结构的CsPbBr3/ZnO混合膜,用于人工光电突触. 这个设备模仿大脑功能,在低电压和弱光条件下有效运行,为先进的神经形态计算铺平了道路.

关键词:
原子层沉积的原子层沉积.类似岛屿的矿膜.金属氧化物的金属氧化物.静止的电流是一个静止的电流.突触混合光电晶体管的突触混合光电晶体管.

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Well-aligned Vertically Oriented ZnO Nanorod Arrays and their Application in Inverted Small Molecule Solar Cells09:32

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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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