基于数据表参数的SiC MOSFET的切换损失模型,使虚拟连接点温度估计成为可能
Claudio Bianchini1, Mattia Vogni1, Alessandro Chini1
1Department of Engineering Enzo Ferrari, University of Modena and Reggio-Emilia, 41125 Modena, Italy.
Sensors (Basel, Switzerland)
|June 27, 2025
概括
用于碳化 (SiC) MOSFETs的新型虚拟传感器使用数值分析模型 (NAM) 和随时可用的电气数据估计结点温度. 这使得功率转换器的实时热量监测能够准确.
科学领域:
- 电力电子 电力电子 电力电子
- 半导体设备 半导体设备
- 热管理 热管理
背景情况:
- 碳化 (SiC) MOSFET在功率转换器中提供了高效率和可靠性,特别是在高温下.
- 准确的热模型对于估计节点温度和功率损失至关重要,切换损失评估尤其具有挑战性.
- 实时交叉点温度监控对于优化性能和防止设备故障至关重要.
研究的目的:
- 在SiC MOSFET中开发一个虚拟传感器,以实时估计SiC MOSFET的连接温度.
- 使用一种新的数值分析模型 (NAM) 为SiC MOSFETs创建一个准确的热模型.
- 通过半桥转换器的实验数据验证拟议模型的准确性.
主要方法:
- 开发了一个数值分析模型 (NAM),仅使用数据表参数和电量 (总线电压和电流).
- 在MATLAB中实现了NAM,其代算法捕捉了切换过渡物理.
- 在PLECS中创建了一个全SiC板的数字双胞胎,将计算的能量损失纳入热建模.
主要成果:
- 虚拟传感器通过利用随时可用的电气数据,准确地估计了接口温度.
- 开发的NAM有效地模拟了SiC MOSFET中的切换损失.
- 模拟结果与实验效率数据进行了验证,证实了模型的准确性.
结论:
- 拟议的虚拟传感器和NAM为SiC MOSFET实时热监测提供了有效的解决方案.
- 该模型依赖数据表参数和集成传感器,简化了功率转换器系统中的实现.
- 精确的热建模对于提高基于SiC的功率转换器的效率和可靠性至关重要.
相关概念视频
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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
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01:22MOSFET: Enhancement Mode
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01:16MOSFET
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01:20MOSFET: Depletion Mode
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