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Updated: Jun 29, 2026

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基于AlGaN的深紫外线LED中的尺寸依赖光子散射效应具有不同的长宽比

Liu Wang, Yuling Wu, Chunshuang Chu

|July 1, 2025

概括

面板的长度/宽度比显著影响深紫外线 (DUV) LED 光学性能. 较大的DUV LED受益于更高的光提取效率 (LEE) 与更高的比率,而较小的则有所下降.

科学领域:

光电学是指光电子产品.
半导体设备半导体设备

背景情况:

深紫外线 (DUV) 发光二极管 (LED) 对各种应用至关重要.
优化光学性能,特别是光提取效率 (LEE),是DUV LED开发的关键.

研究的目的:

系统地研究 mesa 长度/宽度 (L/W) 比对 DUV LED 的光学性能的影响.
了解导致不同尺寸L/W比的DUVLED中尺寸依赖光学行为的潜在机制.

主要方法:

数字模拟或实验测量DUVLED的不同 mesa L/W比率.
在DUV LED结构中分析光的传播,散射和逃逸途径.

主要成果:

对于大尺寸的DUVLED,增加L/W比提高了LEE,通过改善光线反射到逃生圆和增加侧光提取来提高LEE.
对于小尺寸的DUVLED,增加L/W比率会降低LEE,因为GaN和顶部金属对内部反射光的吸收增加.
在不同的L/W比率下,针对大小芯片确定了不同的散射机制.

结论:

梅萨的L/W比率对DUV LED LEE具有尺寸依赖的影响.
这些发现为优化不同尺寸的DUV LED提供了基本的几何设计原则.
了解散射机制对于定制DUV LED光学性能至关重要.

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