Jia Zheng1,2, Ruobing Wang1, Wencheng Fang1

  • 1State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China.

PubMed
概括

研究人员通过使用纳米封闭结构和碳添加GeSbTe的方法,提高了1.1 × 1011循环之外的相变记忆耐力. 这克服了存储类内存的切换电流和耐久性挑战.