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Updated: Sep 17, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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直接观察基介电材料中的3D分布,使用原子探头断层扫描

Byeong-Gyu Chae1, Jeong Yeon Won2, Young Sik Shin2

  • 1Analytical Engineering Group, Material Research Center, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd, Suwon, Republic of Korea. bg.chae@samsung.com.

Nature communications
|July 2, 2025
PubMed
概括

先进的原子探头断层扫描精确地绘制了半导体设备中的分布. 这揭示了形状如何影响新一代电子产品的杂质扩散,电气性能和设备可靠性.

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