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没有的基于Ge-Te的OVON值开关材料,具有减少泄漏电流的漏电

Yoshimasa Matsushita¹, Yi Shuang^2,3, Kosuke Karakida⁴

¹Nippon Electric Glass Co., Ltd, 7-1, Seiran 2-Chome, Otsu, 520-8639, Shiga, Japan. ymatsushita@neg.co.jp.

Scientific reports

|July 2, 2025

概括

研究人员开发了一种新的Ag-Ga-Ge-Te (AGGT) 无形薄膜,用于子值切换 (OTS) 选择器. 这种材料为下一代非易失性内存和处理应用提供了高性能,没有有毒元素.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理
固态化学固态化学

背景情况:

下一代半导体内存需要高速,大容量和非挥发性.
在PCRAM和MRAM等新兴内存技术的高集成中,3D横条阵列至关重要.
选择器在3D结构中是必不可少的,以防止潜伏电流,并使神经形态计算等应用程序成为可能.

研究的目的:

开发用于选择器的新型 Ovonic 值切换 (OTS) 材料.
在OTS材料设计中找到替代等有毒元素的替代品.
研究Ag-Ga-Ge-Te (AGGT) 无形薄膜作为有效切换材料的潜力.

主要方法:

制造Ag-Ga-Ge-Te (AGGT) 形态薄膜.这些薄膜的制造
值切换属性的表征,包括开/关电流比和无形稳定性.
分析Ga和Ag对材料的电特性和导电机制的影响.

主要成果:

AGGT无形薄膜证明了有效的值切换,具有很大的开/关电流比.
加 (Ga) 的添加通过增强离子性和降低载体流动性,减少了OFF状态泄漏电流.
添加银 (Ag) 改善了无形稳定性,从而提高了耐久性,并修改了导电机制.

结论:

AGGT无形薄膜代表了一种具有卓越性能的新类OTS材料.
增强的离子性和无形稳定性是开发先进选择器材料的关键因素.
这些发现为设计无毒OTS材料提供了新的范式,改善了下一代的记忆和处理.

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