基于对52微瓦5.2pJ/比特100Kb/s120 GHz接收器应用的补充级代码切换的1/f降噪技术的基础知识
1Department of Electrical Engineering and Computer Science, Khalifa University of Science and Technology, Abu Dhabi, UAE. mihai.sanduleanu@ku.ac.ae.
Scientific reports
|July 2, 2025
概括
本研究介绍了一种新的120 GHz接收器用于近场物联网 (IoT) 传感器,消除传统组件并减少1/f噪声以提高灵敏度. 这种新技术可以提高低功耗物联网应用的接收器性能.
科学领域:
- 电子和电气工程 电子和电气工程
- 微波工程 微波工程
- 传感器技术 传感器技术
背景情况:
- 传统的120GHz接收器用于近场物联网传感器,通常依赖于体积庞大且耗电密集的低噪音放大器 (LNA) 和混合器.
- 低频1/f噪声是高频接收器灵敏度的一个重要限制因素,特别是在低数据速率应用中.
- 现有的1/f降噪技术通常仅限于低频电路,报告的最高工作频率为120 kHz.
研究的目的:
- 为近场物联网传感器提出并演示了一种新的120 GHz接收器架构,该架构忽略了传统的LNA和混合器块.
- 引入和验证一种新的1/f噪声减轻技术,基于切换偏差来提高接收器的灵敏度.
- 改进接收器的1/f噪声角频率,从而在100kb/s的数据速率下提高其整体灵敏度.
主要方法:
- 提出了一种使用两个MOSFET晶体管互补切换的新型1/f降噪技术,有效地创建一个晶体管.
- 互补的MOSFET的排水端子被隔离,以防止电场干扰并减轻脱过程,这是1/f噪声的一个关键方面.
- 拟议的接收器和降噪技术使用65纳米CMOS LPE技术实现.
主要成果:
- 新的1/f降噪技术实现了排水电流噪声降低9dB,达到100kHz.
- 实现的120 GHz接收器表现出-46 dBm的高灵敏度.
- 接收器在一个紧的0.56毫米2面积内表现出低功耗 (52微瓦) 和出色的能效 (5.2 pJ/bit).
结论:
- 拟议的120 GHz接收器架构,没有传统的LNA和混合器,成功地提高了近场物联网传感器性能.
- 新的开关偏差技术有效地降低了1/f噪声,显著提高了接收器的灵敏度,并使得1/f噪声角频率降低.
- 这项工作在低功耗,高灵敏度接收器设计中取得了重大进展,用于在毫米波频率上运行的新兴物联网应用.
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