在基于KNN的无薄膜中,Mn原子层反相边界增强的铁电
Liqiang Xu1, Zhengyang Kong1, Beibei Zhu1
1Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Leibniz International Joint Research Center of Materials Sciences of Anhui Province, Anhui University, Hefei, 230601, China.
Nature communications
|July 2, 2025
概括
在无 (,) 酸 (KNN) 薄膜中化稳定铁电. 原子层抗相边界改善了残余极化和基里温度,提供了无替代品.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 纳米技术纳米技术
背景情况:
- 由于环境问题,不含的铁电材料如 (,) 酸盐 (KNN) 是可取的.
- KNN 具有出色的压电电性,但铁电性较差,限制了其应用.
- 在KNN中,对 (Mn) 等剂的确切位置占用仍然是一个挑战.
研究的目的:
- 调查KNN薄膜中Mn的占用率.
- 了解胺兴奋剂如何影响铁电性质.
- 制定战略,以提高无KNN基材料的铁电性.
主要方法:
- 制造Mn-doped (K,Na) NbO3基薄膜,具有Mn-原子层的抗相边界.
- 高分辨率成像技术用于分析的结构和分布.
- 电性能测量,包括偏振电场 (P-E) 循环和基里温度测定.
主要成果:
- 证实Mn在KNN网格中占据了A位位置.
- 设计的反相边界稳定了铁电,导致在广的频率范围内产生很大的残余极化 (~72.5μC/cm2).
- 高分辨率成像揭示了密集排列的,纳米级的Mn-丰富的反相边界沿着三个晶体轴.
- 这些边界有效地平衡了界面电荷和紧了界面应变,从而产生了正方形歇斯底里循环和高基里温度 (~400°C).
结论:
- 原子层反相边界是一种可行的策略,可以提高无KNN膜的铁电性.
- 这种方法为设计高性能无铁电材料提供了一条途径.
- 这些发现为在各种应用中取代含铁电材料铺平了道路.
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