在AlInGaN屏障GaN MISHEMT中的特征和两极化效应与III组元素的各种组成
Catherine Langpoklakpam1, Chang-Ching Tu2,3, Edward Yi Chang4
1Department of Photonics, Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang-Ming Chiao-Tung University, Hsinchu, 30010, Taiwan.
Scientific reports
|July 2, 2025
概括
在AlGaInN/GaN金属绝缘体半导体高电子流动性晶体管 (MISHEMT) 中优化AlGaInN屏障组合,可以增强通道电荷和排水电流. 精确控制Al,In和Ga的含量对于设备的性能至关重要.
科学领域:
- 半导体物理 半导体物理
- 材料科学 材料科学 材料科学
- 设备工程 设备工程
背景情况:
- 对于高功率和高频应用而言,AlGaInN/GaN金属绝缘体半导体高电子移动性晶体管 (MISHEMT) 是非常重要的.
- MISHEMT的性能对AlGaInN屏障层的组成和结构非常敏感.
研究的目的:
- 研究AlGaInN屏障层中不同Al,In和Ga组成对AlGaInN/GaNMISHEMT性能的影响.
- 分析屏障层厚度和AlN间隔器在设备特征上的影响.
- 了解格子匹配条件和压电极化在设备操作中的作用.
主要方法:
- 为了建模AlGaInN/GaN MISHEMTs,使用了Sentaurus TCAD模拟.
- 在AlGaInN屏障层中进行了Al,In和Ga组合的系统变化.
- 在模拟中考虑了格子匹配条件和压电极化效应.
主要成果:
- 在格子匹配的AlGaInN屏障中,增加的Al/In和减少的Ga组成显著增强了通道电荷和排水电流,同时负面地转移了值电压.
- 发现屏障层厚度会影响设备的性能.
- 总极化随着Al成分的增加而增加,但随着In成分的增加而减少,而In成分的影响略有强烈.
- 一个AlN间隔层改善了载体的封闭性,并减少了依赖组合的电荷密度变化.
结论:
- 精确控制AlGaInN屏障层的组成对于优化AlGaInN/GaN MISHEMTs的性能至关重要.
- AlN间隔层通过改善载体封闭和减轻与组成相关的不稳定性,在提高设备性能方面发挥着至关重要的作用.
- 基于模拟的分析为下一代高性能MISHEMTs的合理设计提供了宝贵的见解.
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