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Lei Zhao^1,2, Xiangbing Wang^1,2, Nan Jiang²

¹School of Mechanical Engineering, Yangzhou University, Yangzhou, 225009, China.

Scientific reports

|July 2, 2025

概括

这项研究优化了使用O2/Ar气体对单晶钻石进行感应合等离子体 (ICP) 蚀刻. 最佳参数产生高蚀刻率和可接受的表面粗度,这对于钻石设备制造至关重要.

科学领域:

材料科学材料科学材料科学
等离子体物理学的物理学
表面工程是什么?表面工程是什么?

背景情况:

单晶钻石是先进的电子和光子设备的有希望的材料.
精确的钻石图案对于设备制造至关重要.
感应合等离子 (ICP) 蚀刻为钻石微型制造提供了一种可行的方法.

研究的目的:

实验性地研究和优化单晶钻石的ICP蚀刻过程.
确定关键蚀刻参数对蚀刻速率和表面粗度的影响.
为高质量的钻石造型创造最佳条件.

主要方法:

使用O2/Ar气体混合物进行ICP蚀刻工艺.
系统地改变了蚀刻参数,包括气流比率,ICP功率,射频功率和室内压力.
使用激光共聚焦显微镜分析了蚀刻速率和表面粗度.
通过测量钻石蚀刻深度和面具耗尽,计算了蚀刻选择性.

主要成果:

确定了最佳蚀刻参数:O2/Ar比率为50/50 sccm,ICP功率为600 W,射频功率为120 W,室内压力为20 mTorr.
蚀刻速度随着高射频和ICP功率的增加而显著增加.
蚀刻速率与氧含量呈正相关性,与室内压力呈最佳趋势.
表面粗度受到气体比率和气压的影响最小,但随着更高的ICP和RF功率而增加.
实现了1:46的蚀刻选择性 (钻石蚀刻深度以掩盖耗尽厚度).

结论:

优化的ICP蚀刻工艺使单晶钻石的高效图案设计成为可能.
对蚀刻参数的控制对于平衡蚀刻速率和表面质量至关重要.
确定的最佳条件为制造高精度的基于钻石的微设备提供了基础.

关键词:

蚀刻参数蚀刻参数蚀刻速率蚀刻速度感应合的等离子蚀刻.一个单晶钻石钻石.表面的粗度表面的粗度

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