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Updated: Sep 17, 2025

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接口通过自发相位过渡形成从α-到 κ-Ga2O3

Chanwoong Kim1, Yoonho Choi1, Dong-Gwan Kim1

  • 1Department of Advanced Materials Science and Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.

ACS applied materials & interfaces
|July 2, 2025
PubMed
概括

研究人员优化了氧化 (Ga2O3) 异质接口的生长,实现了统一的,原子突如其来的连接. 这种可控接口形成对于开发先进的电子和光电子设备至关重要.

关键词:
带偏移的抵消 带偏移异面接口是异面接口.阶段过渡 阶段过渡α-Ga2O3O3是什么?α-Ga2O3是什么?κ-Ga2O3 的时间.

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