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Updated: Sep 17, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

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通过高-κ介电介质和使用单脉冲电荷送的接口陷提取增强InGaZnO晶体管电流

JaeHyeong Park1,2, Hyo-Bae Kim3, Sang Min Yu1,4

  • 1Department of Electrical and Electronic Engineering, Hanyang University, Ansan, 15588, Korea.

Scientific reports
|July 2, 2025
PubMed
概括

在氧化物半导体晶体管中增加驱动电流是更好的显示器和更快的内存的关键. 这项研究表明,虽然高-κ介电剂提高了性能,但接口陷限制了收益,凸显了减少它们的必要性,以实现最佳的设备增强.

关键词:
高-κ 门介电器在GaZnO晶体管中的晶体管.接口陷 接口陷 是一个氧化物半导体 氧化物半导体单脉冲充电送方式

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