相关实验视频

Updated: Sep 17, 2025

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.4K

对单个magMEMS和MEMS振荡器的动态引入的概括分析

Piotr Skrzypacz1, Grant Ellis1, Bartosz Pruchnik2

  • 1Department of Mathematics, School of Sciences and Humanities, Nazarbayev University, Kabanbay Batyr 53, 010000, Astana, Kazakhstan.

Scientific reports
|July 3, 2025
PubMed
概括

这项研究通过分析得出了微电机系统 (MEMS) 执行器的确切拉动值. 这些发现为基于磁力和距离的驱动提供了精确的公式,这对于MEMS设备设计至关重要.

关键词:
动态拉进 动态拉进在MEMS MEMS中使用.马格米姆斯 (MagMEMS) 是一个很大的问题.周期性解决方案 周期性解决方案单一振荡器是一个单一的振荡器.

更多相关视频

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters15:25

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Published on: February 4, 2018

6.2K
Fabrication and Testing of Microfluidic Optomechanical Oscillators09:10

Fabrication and Testing of Microfluidic Optomechanical Oscillators

Published on: May 29, 2014

12.3K

相关概念视频

Oscillations In An LC Circuit01:30

Oscillations In An LC Circuit

An idealized LC circuit of zero resistance can oscillate without any source of emf by shifting the energy stored in the circuit between the electric and magnetic fields. In such an LC circuit, if the capacitor contains a charge q before the switch is closed, then all the energy of the circuit is initially stored in the electric field of the capacitor. This energy is given by
2.5K
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
746
Design Example: Underdamped Parallel RLC Circuit01:17

Design Example: Underdamped Parallel RLC Circuit

Consider designing an oscillator circuit, a crucial component in various electronic devices and systems. The objective is to create an oscillator circuit with specific characteristics: a damped natural frequency of 4 kHz and a damping factor of 4 radians per second. To accomplish this, a parallel RLC circuit is employed, known for its ability to sustain oscillations at a resonant frequency. In this case, the damping factor is pivotal in achieving the desired performance.
Starting with a fixed...
380
Magnetic Damping01:17

Magnetic Damping

Eddy currents can produce significant drag on motion, called magnetic damping. For instance, when a metallic pendulum bob swings between the poles of a strong magnet, significant drag acts on the bob as it enters and leaves the field, quickly damping the motion.
If, however, the bob is a slotted metal plate, the magnet produces a much smaller effect. When a slotted metal plate enters the field, an emf is induced by the change in flux; however, it is less effective because the slots limit the...
564
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
372
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
339