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Updated: Sep 17, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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在基于氧化物的CMOS应用中,用于p型和n型氧化物半导体的Al2O3的材料特定扩散屏障性能

Yuxuan Zhang1, Dong Hun Lee1, Honghwi Park2,3

  • 1School of Engineering Technology, Purdue University, West Lafayette, Indiana 47907, United States.

ACS applied materials & interfaces
|July 3, 2025
PubMed
概括

这项研究引入了一个Al2O3封装层来稳定p型SnOx,提高其在氧化物电子中的性能. 封装有效地阻止和氧的扩散,增强设备的稳定性和功能.

关键词:
Al2O3 的使用情况.在ZnO (IZO) 中.斯诺克斯 (SnOx) 是一个扩散屏障是一种扩散屏障.这是一种p型氧化物.

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