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在具有Hf-Doped Heterobilayer结构的In-Zn-O TFT中改进了交流排水偏差稳定性

Hyunjeong Doh, Hyeokjun You, Hwijoong Kim

¹Department of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea.

ACS applied materials & interfaces

|July 3, 2025

概括

这项研究引入了一种使用Hf-doped氧化物 (IZO) 的新型异构聚合薄膜晶体管 (TFT),以显著提高金属氧化物半导体的交流偏移稳定性,克服热载波效应,以实现可靠的显示技术.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
半导体物理半导体物理

背景情况:

金属氧化物半导体对于显示技术至关重要,因为它们具有高电子流动性和低泄漏率.
在交流偏差压力下设备的不稳定性,特别是由于热载体效应 (HCE),是一个主要的挑战.
HCE诱导氧气空缺 (V_O) 和缺陷状态,降低性能.

研究的目的:

为了提高基于氧化物 (IZO) 的薄膜晶体管 (TFT) 的交流偏差稳定性和电子流动性.
为了减轻热载体效应 (HCE) 和IZO TFTs中相关的缺陷产生.
为改善在交流应力下设备性能提出一个异构体结构.

主要方法:

使用IZO底层和Hf-dopedIZO顶层制造异构体TFT通道.
在交流排水偏差应力下对设备特征的调查.
使用TCAD模拟来验证异构体结构的有效性.

主要成果:

该IZO:Hf/IZO双层TFT实现了7.3厘米的移动性.
经过1000秒的交流应力后,AC稳定性非常好,只有4%的降解.
呈现了微不足道的歇斯底里,优良的可重现性,0.11V的门电压转移,以及高的开/关比 (1.8 × 10 ^6).

结论:

异构体结构有效地抑制氧气空缺和缺陷生成,增强交流偏移的稳定性.
在顶部IZO层中的Hf-doping加强了氧结合,减轻了HCE.
拟议的IZO:Hf/IZO TFT为稳定和高性能显示应用提供了一个有前途的解决方案.

关键词:

交流电流稳定性交流电流稳定性在 Hf 兴奋剂的使用中.无形氧化物半导体半导体异构体结构是异构体的结构.薄膜晶体管是一种薄膜晶体管.

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