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Updated: Sep 17, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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在MoS2中的Schottky二极管中接近理想的Schottky校正特性

Xiaokun Wen1,2, Wenyu Lei1,2, Weijia Tang2,3

  • 1Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, PRC.

ACS applied materials & interfaces
|July 4, 2025
PubMed
概括

研究人员通过优化接触和通道厚度,使用二硫化 (MoS) 实现了理想的肖特基二极管. 这些2D半导体设备显示出出色的电子和光电子性能,推进了基于TMD的电子.

关键词:
在MoS2中,MoS2就是MoS2.斯科特基二极管是如何使用的具有理想的整形特性.接口 接口 接口 接口 接口光电二极管是指光电二极管.

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