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Updated: Jul 23, 2026

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适用于CMOS兼容的压力辅助固相扩散技术,用于大面积多层石墨烯合成

Kunjesh Agashiwala1, Ankit Kumar1, Lin Xu1

  • 1Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA, 93106, USA.

Small (Weinheim an der Bergstrasse, Germany)
|July 7, 2025
PubMed
概括

研究人员开发了一种新方法来合成与半导体制造兼容的多层石墨烯 (MLG) 互连. 与传统的金属互连相比,这种突破提供了更高的电导率和可靠性.

关键词:
它们是CMOS兼容的.它们是间歇性干扰.多层石墨烯多层石墨烯压力辅助的固体相扩散.免费转移 - 免费转移

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...