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Updated: Sep 16, 2025

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
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Fabricating van der Waals Heterostructures with Precise Rotational Alignment

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在自然平行堆叠的多层ReSe半导体中出现滑动铁电

Wuhong Xue1,2, Peng Wang1,2, Wenjuan Ci1,2

  • 1Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan, China.

Nature communications
|July 8, 2025
PubMed
概括

研究人员在自然堆叠的层中发现了一种新的滑动铁电半导体 - - 二化 (ReSe2). 这一突破简化了未来的兼容电子和光电子的slidetronics.

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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