液体金属在无序的多孔介质中以电压控制的模式转换
Zilu He1, Rui Xiao1, Shaoxing Qu1
1Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Department of Engineering Mechanics, Zhejiang University, Hangzhou 310027, China. rxiao@zju.edu.cn.
Soft matter
|July 11, 2025
概括
微流体系统中的液体金属 (LMs) 呈现出电压依赖的流动模式. 了解这些转变是开发先进软电子和可重新配置电路的关键.
科学领域:
- 材料科学 材料科学 材料科学
- 流体动力学 流体动力学
- 微流体学 微流体学
背景情况:
- 液体金属 (LMs) 为微流体应用提供独特的导电性和流体性质.
- 在不同电气和流量条件下的微通道中的动态LM行为未得到充分研究.
- 电压诱导的模式转换对于基于LM的设备集成至关重要.
研究的目的:
- 在不同电压和流量下,系统地研究微流体芯片中的LM流量模式.
- 了解电刺激和流体动力学对LM行为的相互作用.
- 为LM应用提供优化微流体参数的指导方针.
主要方法:
- 基于聚甲基 (PDMS) 的微流体芯片的制造.
- 在受控电压和流量下对LM流量进行系统的研究.
- 开发一个理论模型来量化电压驱动的转换.
主要成果:
- LM流量模式高度依赖于电压和流速的联合效应.
- 在高流速下,电压对LM流量模式的影响最小.
- 在低流速下,电压会导致由马兰戈尼效应驱动的从指形到树形到不连续流动的过渡.
结论:
- 电压显著影响LM流动力学,特别是在低流速时.
- 马兰戈尼驱动的界面动力学在电压诱导的模式转换中起着至关重要的作用.
- 该研究为设计和优化基于LM的微流体设备提供了必要的见解.
相关概念视频
Theory of Metallic Conduction
1.4K
The conduction of free electrons inside a conductor is best described by quantum mechanics. However, a classical model makes predictions close to the results of quantum mechanics. It is called the theory of metallic conduction.
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...
1.4K
Phase Transitions
20.3K
Whether solid, liquid, or gas, a substance's state depends on the order and arrangement of its particles (atoms, molecules, or ions). Particles in the solid pack closely together, generally in a pattern. The particles vibrate about their fixed positions but do not move or squeeze past their neighbors. In liquids, although the particles are closely spaced, they are randomly arranged. The position of the particles are not fixed—that is, they are free to move past their neighbors to...
20.3K
The Fluid Mosaic Model
153.9K
The fluid mosaic model was first proposed as a visual representation of research observations. The model comprises the composition and dynamics of membranes and serves as a foundation for future membrane-related studies. The model depicts the structure of the plasma membrane with a variety of components, which include phospholipids, proteins, and carbohydrates. These integral molecules are loosely bound, defining the cell’s border and providing fluidity for optimal function.
153.9K
Metallic Solids
18.8K
Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
18.8K
Metal-Semiconductor Junctions
519
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
519
Biasing of Metal-Semiconductor Junctions
338
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
338


