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Updated: Sep 16, 2025

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在MWCNT和RGO分散的SnTe中使用自旋共振和磁性测量来研究缺陷诱导的磁性异构性

Subhadip Ghosh1, Shivam Shukla2, Sanjeev Kumar Srivastava2

  • 1School of Nano Science and Technology, Indian Institute of Technology, Kharagpur, 721302, West Bengal, India. subhadipjrc@gmail.com.

Nanoscale
|July 11, 2025
PubMed
概括

将锡化物 (SnTe) 纳米粒在碳纳米材料上可以减少缺陷,增强导电性,并使奇特的量子状态成为可能. 这在拓晶体绝缘体 (TCI) 中产生了新的磁性特性.

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