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Updated: Sep 16, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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驱动的等离子调制用于调整钻石中的空位形成

Rahul Raj1, N Chandrasekaran2, K G Pradeep2

  • 1Department of Physics, Quantum Centre of Excellence for Diamond and Emergent Materials (QuCenDiEM), India Centre for Lab-Grown Diamond (InCent-LGD), Nano Functional Materials Technology Center and Materials Science Research Center, Indian Institute of Technology Madras, Chennai, Tamil Nadu 600036, India.

Nanotechnology
|July 11, 2025
PubMed
概括

我们使用微波等离子体化学蒸气沉积来证明钻石中空 (SiV) 中心的受控生长. 这种可扩展的方法可以为先进的量子光子应用程序精确调整SiV层.

关键词:
原子探头断层扫描 (tomography) 是一种原子探头.横截面的 PL 映射.德尔塔地区的兴奋剂.在的空缺.单一光子源的来源是单一的

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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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