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Updated: Sep 16, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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基于二维MOO3层的多位电阻随机访问内存

Kai Liu1, Wengui Jiang1, Liang Zhou1

  • 1Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China.

Nanomaterials (Basel, Switzerland)
|July 12, 2025
PubMed
概括

二维层状金属氧化物为神经形态计算提供了先进的电阻随机访问存储器 (RRAM). 石墨烯集成显著改善了RRAM保留时间,使强大的内存计算应用程序成为可能.

关键词:
多层级的储存多层次的储存.电阻随机访问存储器 电阻随机访问存储器电阻切换层的电阻切换层.两个维的金属氧化物.一个α-MoO3纳米板.

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